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| inchange semiconductor product specification silicon npn power transistors BUL310FP description ? ? with to-220f package ? high voltage,high speed ? wide area of safe operation applications ? electronic ballasts for fluorescent lighting ? switch mode power supplies ? flyback and forward single transistor low power converters pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1000 v v ceo collector-emitter voltage open base 500 v v ebo emitter-base voltage open collector 9 v i c collector current (dc) 5 a i cm collector current-peak t p <5ms 10 a i b base current (dc) 3 a i bm base current-peak t p <5ms 4 a p tot total power dissipation t c =25 ?? 36 w t j maximum operating junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter value unit r th j-case thermal resistance junction to case 3.5 ??/w fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BUL310FP characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ; i b =0; l=25mh 500 v v (br)ebo emitter-base breakdwon voltage i e =10ma ;i c =0 9 v v cesat-1 collector-emitter saturation voltage i c =1a; i b =0.2a 0.5 v v cesat-2 collector-emitter saturation voltage i c =2a ;i b =0.4a 0.7 v v cesat-3 collector-emitter saturation voltage i c =3a ;i b =0.6a 1.1 v v besat-1 base-emitter saturation voltage i c =1a; i b =0.2a 1.0 v v besat-2 base-emitter saturation voltage i c =2a ;i b =0.4a 1.1 v v besat-3 base-emitter saturation voltage i c =3a ;i b =0.6a 1.2 v i ces collector cut-off current v ce =1000v; v be =0 t c =125 ?? 100 500 | a i ceo collector cut-off current v ce =400v; i b =0 250 | a h fe-1 dc current gain i c =10ma ; v ce =5v 10 h fe-2 dc current gain i c =3a ; v ce =2.5v 10 switching times inductive load t s storage time 1.9 | s t f fall time i c =2a ;v cl =250v i b1 =0.4a;v be(off) =-5v l=200 | h; r bb =0 |? 0.16 | s inchange semiconductor product specification 3 silicon npn power transistors BUL310FP package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm) |
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